Semiconductor devices

ABSTRACT

A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

CROSS-REFERENCE TO RELATED APPLICATIONS

This patent application is a continuation of U.S. patent applicationSer. No. 16/855,321 filed Apr. 22, 2020, which claims the benefit under35 USC § 119(a) of Korean Patent Application No. 10-2019-0112982, filedon Sep. 11, 2019, in the Korean Intellectual Property Office (KIPO), andthe entire contents of each above-identified application areincorporated by reference herein.

BACKGROUND 1. Field

Example embodiments relate to semiconductor devices. More particularly,example embodiments relate to semiconductor devices including finfield-effect transistors (finFETs).

2. Description of the Related Art

A semiconductor device may include a first region in which finFETs areformed and a second region in which the finFETs are not formed. Activefins may be repeatedly disposed in the first region. The active finsformed in the second region may be removed, so that the active fins maynot be disposed in the second region. However, some of the active finsmay not be removed and may remain in the second region, and thus defectscaused by the remaining active fins may occur.

SUMMARY

Example embodiments provide semiconductor devices having excellentcharacteristics.

According to example embodiments, there is provided a semiconductordevice that may include a substrate including first regions and a secondregion between the first regions. Active fins may protrude from thesubstrate in the first regions. Each of the active fins may extend in afirst direction that is parallel to an upper surface of the substrate.The active fins may be regularly arranged and may be spaced apart fromeach other in a second direction that is parallel to the upper surfaceof the substrate and perpendicular to the first direction. Firsttrenches may be at both edges in the second direction of the secondregion. A protrusion may be between the first trenches. An upper surfaceof the protrusion may be lower than a bottom of each of the active fins.A first width in the second direction of one of the first trenches maybe greater than 0.7 times a first pitch of the active fins that is a sumof a width of one of the active fins and a distance between adjacentones of the active fins.

According to example embodiments, there is provided a semiconductordevice that may include a substrate including first regions and a secondregion between the first regions. Active fins may protrude from thesubstrate in the first regions. Each of the active fins may extend in afirst direction that is parallel to an upper surface of the substrate.The active fins may be regularly arranged, and may be spaced apart fromeach other in a second direction that is parallel to the upper surfaceof the substrate and perpendicular to the first direction. Each of theactive fins includes a lower active fin and an upper active fin on thelower active fin. First trenches may be at both edges in the seconddirection of the second region, and a protrusion may be between thefirst trenches. A first isolation pattern may be in a gap between thelower active fins. An isolation structure may include a second isolationpattern in one of the first trenches and a third isolation pattern onthe protrusion. A gate structure may extend in the second direction onthe active fins, the first isolation pattern, and the isolationstructure. An upper surface of the protrusion and a bottom of the firsttrench are lower than a bottom of one of the active fins.

According to example embodiments, there is provided a semiconductordevice that may include a substrate including first regions and a secondregion between the first regions. Active fins may protrude from thesubstrate in the first regions. Each of the active fins may extend in afirst direction that is parallel to an upper surface of the substrate.The active fins may be regularly arranged, and may be spaced apart fromeach other in a second direction that is parallel to the upper surfaceof the substrate and perpendicular to the first direction. Firsttrenches may be at both edges in the second direction of the secondregion. Protrusions may be between the first trenches. A first activefin of the active fins may be at an edge portion among the active finsin the second direction among the active fins. An end portion of thefirst active fin extending laterally from a lower portion of the firstactive fin may be connected to a sidewall of the first trench. The endportion of the first active fin and the sidewall of the first trench mayhave a non-linear shape.

In the semiconductor device in accordance with example embodiments, thefirst trench and the protrusion may be formed in the second region, andactive fins may not remain in the second region. Therefore, defectscaused by remaining active patterns in the second region may decrease.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings. FIGS. 1 to 26 represent non-limiting, example embodiments asdescribed herein.

FIGS. 1, 2A, and 2B are a plan view and cross-sectional viewsillustrating a vertical semiconductor device in accordance with exampleembodiments.

FIGS. 3 and 4 are respective cross-sectional views illustrating verticalsemiconductor devices in accordance with example embodiments.

; FIGS. 5 to 17 are cross-sectional views and plan views illustratingstages of a method of manufacturing a semiconductor device in accordancewith example embodiments.

FIGS. 18 and 19 are a plan view and a cross-sectional view illustratinga semiconductor device in accordance with example embodiments.

FIGS. 20 and 21 are a plan view and a cross-sectional view illustratingstages of a method of manufacturing a semiconductor device in accordancewith example embodiments.

FIG. 22 is a cross-sectional view illustrating a semiconductor device inaccordance with example embodiments.

FIGS. 23 to 25 are cross-sectional views illustrating semiconductordevices in accordance with example embodiments.

FIG. 26 is a plan view illustrating a method of manufacturing asemiconductor device in accordance with example embodiments.

DETAILED DESCRIPTION OF EMBODIMENTS

Hereinafter, two directions substantially parallel to an upper surfaceof the substrate and crossing each other are defined as a firstdirection and a second direction, respectively. A directionsubstantially perpendicular to the upper surface of the substrate isdefined as a vertical direction. The first and second directions aresubstantially perpendicular to each other. It will be understood that,although the terms first, second, third, etc. may be used herein todescribe various elements, the elements should not be limited by theseterms; rather, these terms are only used to distinguish one element fromanother element. Thus, a first element discussed could be termed asecond element without departing from the scope of the present inventiveconcepts.

FIGS. 1, 2A, and 2B are a plan view and cross-sectional viewsillustrating a semiconductor device in accordance with exampleembodiments. FIGS. 3 and 4 are respective cross-sectional viewsillustrating semiconductor devices in accordance with exampleembodiments.

Particularly, FIG. 2A is a cross-sectional view taken along the lineI-I′ of FIG. 1. FIG. 2B is a cross-sectional view taken along the lineII-II′ of FIG. 1. The semiconductor devices shown in FIGS. 3 and 4 aresubstantially the same as a semiconductor device shown in FIGS. 1, 2A,and 2B, except with respect to a shape of a trench formed in the secondregion.

Referring to FIGS. 1, 2A, and 2B, a substrate may include first regionsA in which finFETs are formed and a second region B in which the finFETsare not formed. The second region B may be disposed between the firstregions A. The second region B may serve as a device isolation region.

The substrate 100 may include a semiconductor material such as silicon,germanium, or silicon-germanium, or a group III-V compound such as GaP,GaAs, GaSb, or the like. In example embodiments, the substrate 100 maybe a silicon-on-insulator (SOI) substrate or a germanium-on-insulator(GOI) substrate.

Active fins 115 protruding from a surface of the substrate 100 may beformed in the first region A. A first gap may be formed between theactive fins 115.

The active fins 115 may extend in the first direction, and the activefins 115 may be regularly arranged in the second direction.

Hereinafter, when same patterns are regularly arranged, a sum of a widthof one of the same patterns and a distance between the same patterns isdefined as a pitch. In example embodiments, the active fins 115 may bedisposed such that the sum of a width d1 of one of the active fins and adistance d2 between the active fins has a first pitch P. Hereinafter,the width may be a width in the second direction.

In an example embodiment, when the first pitch P of the active fins 115may be relatively narrow and a width of the device isolation region Bmay be relatively wide and/or large, a suitable isolation structure maybe provided. In example embodiments, the first pitch P may be about 40nm or less. For example, the first pitch P may be about l0 nm to about30 nm.

The first isolation pattern 120 may be in and/or fill a lower portion ofthe first gap. It will be understood that “an element A fills an elementB” (or similar language) as used herein means that the element A is inthe element B but does not necessarily mean that the element A fills theelement B entirely. Thus, the active fin 115 may include a lower activefin 115 b covered by the first isolation pattern 120 and an upper activefin 115 a not covered by the first isolation pattern 120 (e.g., thefirst isolation pattern 120 is not on the upper active fin 115 a). Inexample embodiments, a width (e.g., in the second direction) of theupper active fin 115 a may be less than a width of the lower active fin115 b. For example, the first isolation pattern 120 may include an oxidesuch as silicon oxide.

A height from an upper surface of the active fin 115 to a bottom of thefirst gap is referred to as a first height h1.

Trenches may be formed at both side edges in the second direction of thesecond region of the substrate. The trench and a protrusion may bealternately and repeatedly disposed in the second region.

In example embodiments, two first trenches 140 a, one second trench 140b, and two protrusions 142 may be formed in the second region B. Forforming one of the trenches, a width of at least the first pitch P maybe needed. Also, for forming one of the protrusions, a width of at leastthe first pitch P may be needed. Thus, in this case, a width of thesecond region B may be greater than at least five times the first pitchP.

The first trenches 140 a may be formed at both side edges of the secondregion B that are adjacent to the first region A, respectively. Further,the second trench 140 b may be formed between the first trenches 140 a.

Protrusions 142 may be formed between (e.g., in the second direction)the first and second trenches 140 a and 140 b, respectively. An uppersurface of the protrusion 142 may be substantially flat. The secondtrench 140 b may be disposed between (e.g., in the second direction) theprotrusions 142.

The protrusion 142 may be formed at a portion where at least onepreliminary first mask pattern that served as an etching mask forforming the active fin 115 is removed. If one preliminary first maskpattern is removed, the width W2 of the protrusion 142 may be similar tothe first pitch P. Particularly, the width W2 of the protrusion 142 maybe about 0.7 times to about 1.0 times the first pitch P in considerationof a slope of the protrusion 142 and process deviations. Thus, the widthW2 of the protrusion 142 may be greater than 0.7 times the first pitchP.

In example embodiments, the width W2 of the protrusion 142 may varydepending on the number of preliminary first mask patterns to beremoved. In order to stabilize manufacturing process, at least twopreliminary first mask patterns may be removed. Thus, preferably, thewidth W2 of the protrusion 142 may be greater than the first pitch P.

In example embodiments, an upper surface of the protrusion 142 may belower than a bottom of the first gap between the active fins 115. If theupper surface of the protrusion 142 is higher than the bottom of thefirst gap between the active fins 115, a device isolation characteristicmay deteriorate.

Hereinafter, the active fin 115 disposed at the edge in the seconddirection of the first region A is referred to as a first active fin. Anend portion E extending laterally from the lower portion of the firstactive fin (e.g., towards the second region B) is referred to as an endportion of the first active fin. The end portion E of the first activefin may be connected to the sidewall of the first trench 140 a.

The bottom of the first trench 140 a may be lower than the upper surfaceof the protrusion 142. Therefore, the bottom of the first trench 140 amay be lower than the bottom of the first gap. Also, the end portion Eof the first active fin and the sidewall of the first trench 140 a mayhave a bent shape (e.g., a non-linear and/or curved shape).

Hereinafter, an angle between a sidewall of a trench and a line parallelto a flat bottom of the trench may be referred to as a sidewall slope.FIG. 2A illustrates an example sidewall slope s1 for a sidewall of afirst trench 140 a.

In example embodiments, the sidewall slope of the first trench 140 a maybe about 85° to about 90°. If the sidewall slope of the first trench 140a is less than 85°, a defect in which the second active pattern is notremoved at the edge portion in the second direction of the second regionB may be generated. Preferably, the sidewall slope of the first trench140 a may be about 87° to about 90°.

The sidewall slope of the first trench 140 a may vary depending on thewidth of the first trench 140 a. For example, as the width of the firsttrench 140 a increases, the sidewall slope of the first trench 140 a maybe gentle (e.g., less vertical). Therefore, the width of the firsttrench 140 a may be controlled so that the sidewall slope of the firsttrench 140 a may be about 85° to about 90°.

In example embodiments, the width W1 of the first trench 140 a may begreater than 0.7 times the first pitch P and less than 20 times thefirst pitch P. For example, the width W1 of the first trench 140 a maybe in a range of about 10 nm to about 500 nm. In this case, the width W1of the first trench 140 a may vary depending on a position of thesidewall of the protrusion 142 serving as one sidewall of the firsttrench 140 a.

When the width of the first trench 140 a is 500 nm or less, the sidewallslope of the first trench 140 a may be about 85° to about 90°, and avariation of the sidewall slope due to an etch loading may not be large.However, if the width of the first trench 140 a is greater than 20 timesthe first pitch or is greater than 500 nm, the sidewall slope of thefirst trench 140 a may be smaller than about 85°.

The first trench 140 a may be formed by removing at least one secondactive pattern formed at an edge in the second direction of the secondregion B. For example, when the first trench is formed by removing onesecond active pattern, the width of the first trench 140 a may besimilar to the first pitch P. The width of the first trench 140 a may begreater than 0.7 times the first pitch P in consideration of a slope ofthe first trench 140 a and process deviation. Thus, the width of thefirst trench 140 a may be greater than 0.7 times the first pitch P. Thewidth W1 of the first trench 140 a may vary depending on the number ofsecond active patterns to be removed.

The second trench 140 b may not be adjacent to the first region A, andthe second trench 140 b may be spaced apart from the first region A.Therefore, the sidewall slope and the width W3 of the second trench 140b may not affect the device isolation characteristic. Thus, an allowablerange of the sidewall slope of the second trench 140 b may be greaterthan the range of the sidewall slope of the first trench 140 a. Forexample, preferably, the sidewall slope of the second trench 140 b maybe about 80° to about 90°. However, the sidewall slope of the secondtrench 140 b is not limited thereto, and the sidewall slope of thesecond trench may be lower than about 80°.

The second trench 140 b may be formed by removing at least one secondactive pattern in the second region B. Therefore, the width of thesecond trench 140 b may be greater than 0.7 times the first pitch P.

As the width W3 of the second trench 140 b is increased, the sidewallslope of the second trench 140 b may be gentle (e.g., less vertical).

In example embodiments, as shown in FIG. 2A, the width W3 of the secondtrench 140 b may be greater than the width W1 of the first trench 140 a.In this case, the sidewall slope of the second trench 140 b may begentler than the sidewall slope of the first trench 140 a. Therefore,slopes of both sidewalls in the first direction of the protrusion 142may not be the same to each other.

On the other hand, as the width of the second trench 140 b is increased,an etching rate may be increased and a bottom of the second trench 140 bmay be lowered. Thus, the bottom of the second trench 140 b may be lowerthan the bottom of the first trench 140 a.

In some example embodiments, as shown in FIG. 3, the width W3 of thesecond trench 140 b may be smaller than the width W1 of the first trench140 a. In this case, the sidewall slope of the second trench 140 b maybe greater than the sidewall slope of the first trench 140 a. Thus, theslopes of both sidewalls of the protrusion 142 in the first directionmay not be the same to each other. In some example embodiments, sidewallslopes of the first and second trenches 140 a and 140 b may beapproximately equal. In some example embodiments, the bottom of thesecond trench 140 b may be coplanar with the bottom of the first trench140 a, or the bottom of the second trench 140 b may be higher than thebottom of the first trench 140 a.

In some example embodiments, as shown in FIG. 4, the width W3 of thesecond trench 140 b may be substantially the same as the width W1 of thefirst trench 140 a. In this case, sidewall slopes of the first andsecond trenches 140 a and 140 b may be substantially the same. Inaddition, bottoms of the second trench 140 b and the first trench 140 amay be substantially coplanar with each other.

In example embodiments, a height h2 from a top surface of the active fin115 to the bottom of the first trench 140 a may be greater than 130% ofthe first height h1. Thus, the device isolation characteristic in thesecond region B may be improved.

In example embodiments, the protrusion 142 and the first trench 140 a inthe second region B may be symmetric with respect to a line extending inthe first direction through a center (e.g., in the second direction) ofthe second region B.

An isolation structure 152 including a second isolation pattern 120 aand a third isolation pattern 150 may be formed on the substrate 100 ofthe second region B. The second and third isolation patterns 120 a and150 may include an oxide such as silicon oxide. The second isolationpattern 120 a and the third isolation pattern 150 may includesubstantially the same material, and thus the second isolation pattern120 a and the third isolation pattern 150 may be merged with each other.

The isolation structure 152 may fill the first and second trenches 140 aand 140 b, and the isolation structure 152 may be on and/or cover theupper surface of the protrusion 142. An upper surface of the isolationstructure 152 may be coplanar with an upper surface of the firstisolation pattern 120 formed in the first region A.

FinFETs may be formed on the first to third isolation patterns 120, 120a and 150 and the upper active fin 115 a. The finFET formed in the firstregion A may be capable of being operated.

The finFET may include a gate structure 160 extending in the seconddirection and a source/drain layer 162 adjacent to both sides of thegate structure 160. The gate structure 160 may include a gate insulationlayer 160 a, a gate electrode 160 b, and a hard mask pattern 160 c.

In example embodiments, the gate insulation layer 160 a may include ametal oxide having a dielectric constant higher than a dielectricconstant of silicon oxide. For example, the gate insulation layer 160 amay include an interface pattern and a high dielectric pattern. The gateelectrode 160 b may include a threshold voltage control pattern and aconductive pattern. The conductive pattern may include a metal.

A plurality of the gate structures 160 may be arranged in the firstdirection. A first insulating interlayer (not shown) may fill a portionbetween the gate structures.

A second insulating interlayer (not shown) may be formed on the gatestructure 160 and the first insulating interlayer. A first contact plug(not shown) may contact an upper surface of the source/drain layer 162through the first and second insulating interlayers.

In addition, the semiconductor device may further include a secondcontact plug contacting the gate electrode 160 b and a wiringelectrically connected to the first contact plug and the second contactplug.

As described above, the first trench 140 a may be formed in the secondregion adjacent to the first active fin formed at the edge in the seconddirection of the first region A. The first trench 140 a may have thewidth greater than 0.7 times the first pitch P and less than 20 timesthe first pitch P. The width of the first trench 140 a may be in a rangeof about 10 nm to about 500 nm. As the width of the first trench 140 ais controlled, the sidewall slope of the first trench 140 a may be about85° to about 90°. Therefore, the active patterns formed in the secondregion B adjacent to the first region A may be removed without leavingany active patterns remaining. Thus, defects caused by remaining activepatterns in the second region may be decreased.

FIGS. 5 to 17 are cross-sectional views and plan views illustratingstages of a method of manufacturing a semiconductor device in accordancewith example embodiments.

Particularly, FIGS. 5, 7, 9, 12, 14, and 16 are plan views, and FIGS. 6,8, 10, 11, 13, 15, and 17 are cross-sectional views. In this case, eachof cross-sectional views is a cross-sectional view of I-I′ of each ofthe plan views.

Referring to FIGS. 5 and 6, preliminary first mask patterns 102 forforming active fins may be formed on a substrate including a firstregion A and a second region B.

The preliminary first mask patterns 102 may extend in the firstdirection, and a plurality of preliminary first mask patterns 102 may bespaced apart from each other by a first distance d2 in the seconddirection. The preliminary first mask patterns 102 may each have a firstwidth d1. The preliminary first mask patterns may be arranged to have afirst pitch P that is a sum of the first width d1 and the first distanced2, and the first pitch P may be constant.

In example embodiments, the preliminary first mask pattern 102 may beformed by a double patterning process or a quadro patterning process.

Referring to FIGS. 7 and 8, a subset of the preliminary first maskpatterns 102 formed in the second region B may be removed to form afirst mask pattern 102 a in the first region A and second and third maskpatterns 102 b and 102 c in second region B. In FIG. 7, the dotted linemay represent removed preliminary first hard mask patterns 102.

In the removing process, the preliminary first mask patterns 102 formedin the first region A may not be removed.

In the removing process, at least one preliminary first mask pattern 102disposed at both edges in the second direction of the second region Bmay not be removed. Therefore, the preliminary first mask pattern 102remaining at the both edges in the second direction of the second regionB may serve as the second mask pattern 102 b.

A portion of the second region B including the second mask pattern 102 bmay correspond to a portion of the second region B for subsequentlyforming the first trench. Therefore, when the number of the second maskpatterns 102 b is increased, the width of the first trench may beincreased. When the number of the second mask patterns 102 b is 20 ormore, the first trench width may be 20 times or more times the firstpitch P, which may be undesirable. In example embodiments, the number ofthe second mask patterns 102 b may be 1 to 20. Further, the width in thesecond direction of the portion of the second region B including thesecond mask patterns 102 b may be in a range of about 10 nm to about 500nm.

In the removing process, at least one preliminary first mask patternadjacent to a portion for forming second mask pattern 102 b in thesecond region B may be removed. Preferably, two or more preliminaryfirst mask patterns may be removed. Regions of removed preliminary firstmask patterns may correspond to a portion for subsequently forming aprotrusion (e.g., protrusion 142 of FIG. 2A). Therefore, when the numberof the removed preliminary first mask pattern is increased, a width ofthe protrusion may be increased.

In the second region B, at least one preliminary first mask pattern mayremain between the regions of the removed preliminary first maskpatterns. The remaining preliminary first mask pattern may serve as thethird mask pattern 102 c. A portion of the second region B including thethird mask pattern 102 c may correspond to a portion for subsequentlyforming a second trench. Therefore, when the number of the third maskpatterns 102 c is increased, a width of the second trench may beincreased. The width of the second trench may not affect a defect of thedevice isolation region B, so that the number of the third mask patterns102 c may not be limited thereto.

For example, as shown in FIGS. 7 and 8, two second mask patterns 102 bmay be disposed (e.g., two second mask patterns 102 b on both sides ofthe second region B), and three third mask patterns 102 c may bedisposed. Also, two preliminary first mask patterns may be removedbetween the second and third mask patterns 102 b and 102 c. However, thenumber of the second and third mask patterns 102 b and 102 c and thenumber of the removed preliminary first mask patterns may not be limitedthereto.

Referring to FIGS. 9 and 10, an upper portion of the substrate 100 maybe etched using the first to third mask patterns 102 a, 102 b, and 102 cas an etching mask to form first active patterns 114 in the first regionA and second active patterns 116 in the second region B.

In the etching process, a first gap 110 a may be formed between thefirst active patterns 114, and a second gap 110 b may be formed betweenthe first and the second active patterns 114 and 116 disposed at aninterface between the first and second regions A and B. In the secondregion B, a third gap 110 c and a fourth gap 112 may be formed betweenthe second active patterns 116. The third gap 110 c may correspond to aportion between the second mask patterns 102 b and/or a portion betweenthe third mask patterns 102 c. The fourth gap 112 may correspond to aportion between the second and third mask patterns 102 b and 102 c.

Due to characteristics of the etching process, the first and secondactive patterns 114 and 116 formed by the etching process may not havecompletely vertical sidewalls respect to an upper surface of thesubstrate 100.

In the etching process, as the gap between the active patterns isdecreased, the active patterns may have a nearly vertical sidewall. Onthe other hand, when the gap between the active patterns is increased,the sidewall slope of the active pattern may be gentle (e.g., lessvertical) due to an etching loading.

In example embodiments, sidewalls of the first active patterns in thefirst region A may have a first angle in a range of about 85° to about90°. Preferably, the first angle may be in a range of about 87° to about90°. Sidewalls of the second active patterns 116 in the second region Bmay have the first angle. That is, the sidewalls of the first activepatterns 114 and the sidewalls of the second active patterns 116 may beformed to have the first angle.

However, as the width between the second mask pattern 102 b and thethird mask pattern 102 c is relatively wide, the sidewall of the secondactive patterns 116 corresponding to the sidewall of the fourth gap 112may have a second angle less than the first angle. In exampleembodiments, the sidewall of the second active pattern 116 correspondingto the sidewall of the fourth gap 112 may be formed to have an angle ofabout 80° to about 90°.

Further, in the etching process, as a width between the patterns isgreater, the etching rate may be increased by the etching loading, andthus an etching depth may be increased. As the width between the secondmask pattern 102 b and the third mask pattern 102 c is relatively large,a bottom of the fourth gap 112 may be further lowered. That is, bottomsof the first to third gaps 110 a, 110 b, and 110 c may be coplanar witheach other, and bottoms of the fourth gaps 112 may be lower than thebottoms of the first to third gaps 110 a, 110 b, andll 0 c. The bottomof the fourth gap 112 may correspond to a top surface of a protrusionthat is subsequently formed.

As described above, at least one second active pattern 116 may be formedat the edge portion of the second region B using the second mask pattern102 b. Also, the first active pattern 114 at the edge in the seconddirection of the first region A and the second active pattern 116 at theedge in the second direction of the second region B may be arranged toface each other with a space therebetween of the first distance.

Referring to FIG. 11, a first isolation layer may be formed to fill thefirst to fourth gaps 110 a, 110 b, 110 c, and 112. The first isolationlayer may be planarized until upper surfaces of the first to third maskpatterns 102 a, 102 b, and 102 c may be exposed to form a firstisolation pattern 120.

Referring to FIGS. 12 and 13, an upper etching mask 130 may be formed onthe first to third mask patterns 102 a, 102 b, and 102 c and the firstisolation pattern 120.

The upper etching mask 130 may be on and/or entirely cover the firstregions A. In the second region B, the upper etching mask 130 may beformed to be on and/or cover the regions of the removed preliminaryfirst mask patterns and regions between the removed preliminary firstmask patterns. That is, the upper etching mask 130 may have one lineshape covering the regions of the removed preliminary first maskpatterns and the regions between the removed preliminary first maskpatterns.

Therefore, the second and third mask patterns 102 b and 102 c in thesecond region B may be exposed by the upper etching mask 130.

Referring to FIGS. 14 and 15, the second and third mask patterns 102 band 102 c, the first isolation pattern 120, and the second activepatterns 116 may be etched using the upper etching mask 130 as anetching mask. Therefore, first and second trenches 140 a and 140 b maybe formed between the upper etching masks 130 in the second region B.When the etching process is performed, the entire first region A may becovered by the upper mask pattern 130. Thus, the first active pattern114 and the first isolation pattern 120 may remain in the first region Awithout etching. Further, the first isolation pattern in the secondregion may be etched to form the second isolation pattern 120 a.

The first trench 140 a may be formed at both edges of the second regionB adjacent to the first region A. Thus, two first trenches 140 a may beincluded in the second region B. The second trench 140 b may be formedbetween the first trenches 140 a.

In the etching process, a bottom of the first trench 140 a may be lowerthan a bottom of the first gap 110 a between the first active patterns114. Therefore, the protrusion 142 may be generated between the firstand second trenches 140 a and 140 b. The second trench 140 b may bedisposed between the protrusions 142.

Sidewalls of the first trench 140 a may be formed to have an angle in arange of about 85° to about 90°. Preferably, the sidewalls of the firsttrench 140 a may have an angle of about 87° to about 90°. When thesidewall of the first trench 140 a has an angle lower than 85°, defectsin which at least a portion of the second active pattern formed at aportion adjacent to the first region A is not etched may occur.

As shown, in an example embodiment, two first trenches 140 a and onesecond trench 140 b may be formed in the second region B. Therefore, awidth of an etched portion for forming each of the first and secondtrenches 140 a and 140 b may be reduced in comparison with a case whereone wide trench is formed in the second region B. As such, the width ofthe etched portion for forming each of the first and second trenches 140a and 140 b may be decreased, so that a sidewall slope of the firsttrench 140 a may be close to 90°. Therefore, the width of the firsttrench 140 a may be controlled to have the sidewall slope of about 85°to 90° by the etching process.

The sidewall slope of the second trench 140 b may not be limitedthereto. That is, the sidewall slope of the second trench 140 b may begreater or smaller than the sidewall slope of the first trench 140 a.

In example embodiments, as shown in FIG. 15, the width of the secondtrench 140 b may be greater than the width of the first trench 140 a.

In some example embodiments, as shown in FIG. 3, the width of the secondtrench 140 b may be smaller than the width of the first trench 140 a.

In some example embodiments, as shown in FIG. 4, the width of the secondtrench 140 b may be formed to be substantially the same as the width ofthe first trench 140 a.

Referring to FIGS. 16 and 17, the upper etching mask 130 may be removed,and an isolation structure 152 may be formed to fill the first andsecond trenches 140 a and 140 b.

In example embodiments, a second isolation layer filling the first andsecond trenches 140 a and 140 b may be formed on the first activepattern 114, the first mask pattern 102 a, and the first and secondisolation layers. The second isolation layer may be planarized until anupper surface of the first mask pattern may be exposed to form a thirdisolation pattern.

Thereafter, upper portions of the first to third isolation patterns 120,120 a and 150 may be etched to partially expose upper sidewalls of thefirst active patterns 114. Thus, the first active patterns 114 mayinclude a lower active pattern of which sidewalls are covered by thefirst isolation pattern 120 and an upper active pattern protruding fromthe first isolation pattern 120.

The first to third isolation patterns 120, 120 a, and 150 may includesubstantially the same material, and thus may be merged with each other.The first isolation pattern 120 may be formed in the first region A. Theisolation structure 152 including the second and third isolationpatterns 120 a and 150 may be formed in the second region B.

Referring to FIGS. 1, 2A, and 2B again, a finFET may be formed on thefirst isolation pattern 120, the isolation structure 152, and the upperactive pattern. The finFET formed in the first region A may be capableof being operated.

The finFET may include a gate structure 160 extending in a seconddirection and a source/drain layer 162 formed on both sides of the gatestructure 160. The gate structure 160 may include a gate insulationlayer 160 a, a gate electrode 160 b, and a hard mask pattern 160 cstacked on one another. In the process for forming the gate structure160, a width of the upper active pattern is slightly decreased to formthe active fin 115. The active fin 115 may include a lower active fin115 b and an upper active fin 115 a. A width of the upper active fin 115a may be less than the width of the lower active fin 115 b.

An example of a method for forming the finFET will be briefly described.

First, a dummy gate structure (not shown) may be formed on the firstisolation pattern 120, the isolation structure 152, and the upper activepattern. The dummy gate structure may extend in the second direction.Spacers may be formed on sidewalls of the dummy gate structure.

The first active patterns exposed by both sides of the dummy gatestructure may be partially etched to form the recess. The source/drainlayer may be formed in the recess.

A first insulating interlayer (not shown) covering the dummy gatestructure, the spacers, and the source/drain layer may be formed, andthe first insulating interlayer may be planarized until an upper surfaceof the dummy gate structure may be exposed. Thereafter, the dummy gatestructure may be removed to form the gate trench.

The gate structure 160 may be formed in the gate trench.

In example embodiments, the gate insulation layer 160 a may include ametal oxide having a dielectric constant higher than a dielectricconstant of silicon oxide. For example, the gate insulation layer 160 amay include an interface pattern and a high dielectric pattern. Asurface of the upper active pattern may be oxidized to form theinterface pattern. In the oxidation process, the surface of the upperactive pattern may be oxidized so that the width of the upper activepattern may be slightly decreased. Therefore, the active fin 115including the upper active fin 115 a and the lower active fin 115 b maybe formed.

Although not shown, a second insulating interlayer covering the gatestructure 160 may be formed, and a first contact plug contacting thesource/drain layer may be formed through the first and second insulatinginterlayers.

A second contact plug contacting the gate electrode 160 b and a wiringelectrically connected to the first contact plug and the second contactplug may be further formed.

As described above, all of the second active patterns formed in thesecond region B may be effectively removed. Therefore, only active finsfor forming the finFET may be formed in the first region A, and thesecond region may have excellent device isolation characteristics.

In the manufacturing of the semiconductor device, the number of thesecond mask patterns, the number of the third mask patterns, and thedistance between the second and third mask patterns may be controlled,so that shapes of the trenches and the protrusion formed in the secondregion B may be changed. Hereinafter, example embodiments of thesemiconductor device having different shapes of trenches and protrusionsin the second region will be described.

FIGS. 18 and 19 are a plan view and a cross-sectional view illustratinga semiconductor device in accordance with example embodiments.

The semiconductor device shown in FIGS. 18 and 19 is substantially thesame as the semiconductor device shown in FIGS. 1, 2A, and 2B, exceptthat the second trench is not included. Therefore, the first trenchesand the protrusions formed in the second region may be mainly described.

Referring to FIGS. 18 and 19, the first trenches 140 a may be formed atboth side edges of the second region B adjacent to the first region A,respectively. That is, two first trenches 140 a may be formed in thesecond region B.

In example embodiments, one protrusion 142 may be formed between thefirst trenches 140 a. That is, two first trenches 140 a and oneprotrusion 142 may be formed in the substrate 100 of the second regionB. For forming one of the trenches, a width of at least the first pitchP may be needed. Also, for forming of the protrusion, a width of atleast the first pitch P may be needed. Therefore, in this exampleembodiment, the width of the second region B may be greater than atleast three times the first pitch P.

In example embodiments, the sidewall slope of the first trench 140 a maybe about 85° to about 90°. In addition, the width of the first trench140 a may be greater than 0.7 times the first pitch P and less than 20times the first pitch P. For example, the width of the first trench 140a may be in a range of about 10 nm to about 500 nm.

In example embodiments, the width of the protrusion 142 may be greaterthan the width of the active fin 115. The width of the protrusion 142may be greater than 0.7 times the first pitch P. Preferably, the widthof the protrusion 142 may be the same as the first pitch P or greaterthan the first pitch P.

In example embodiments, the first trenches 140 a formed in the secondregion B may be symmetrical to each other with respect to a lineextending in the first direction through a center (e.g., in the seconddirection) of the second region B.

FIGS. 20 and 21 are a plan view and a cross-sectional view illustratingstages of a method of manufacturing a semiconductor device in accordancewith example embodiments.

First, the processes as illustrated with reference to FIGS. 5 and 6 maybe performed. Referring to FIG. 20, a subset of the preliminary firstmask patterns 102 formed in the second region B may be removed to form afirst mask pattern 102 a in the first region A and a second mask pattern102 b in the second region B, respectively.

The second mask pattern 102 b may be a remained preliminary first maskpattern at each of the edges in the second direction of the secondregion B. A portion of the second region B containing the second maskpattern 102 b may correspond to a portion for forming the first trench.

Further, the preliminary first mask patterns between the second maskpatterns 102 b may be removed, and the removed subsets of thepreliminary first mask patterns (that is, dashed portions in FIG. 20)may correspond to a portion for forming the first protrusion.

Referring to FIG. 21, the substrate 100 may be etched using the firstand second mask patterns 102 a and 102 b to form a first active pattern114 and a second active pattern 116, respectively. The etching processmay be substantially the same as illustrated with reference to FIGS. 9and 10.

Thereafter, processes as described with reference to FIGS. 11 to 17 maybe performed to manufacture the semiconductor device shown in FIGS. 18and 19.

FIG. 22 is a cross-sectional view illustrating a semiconductor device inaccordance with example embodiments. FIGS. 23 to 25 are cross-sectionalviews illustrating semiconductor devices in accordance with exampleembodiments.

Each of the semiconductor devices shown in FIGS. 22 to 24 may besubstantially the same as the semiconductor device shown in FIGS. 1, 2A,and 2B, except that each of the semiconductor devices illustrated inFIGS. 22 to 24 may include a plurality of second trenches between thefirst trenches. Also, a second protrusion may be further includedbetween the plurality of second trenches. Therefore, the first andsecond trenches and the second protrusion formed in the second regionare mainly described.

Referring to FIG. 22, the first trenches 140 a may be formed at bothside edges of the second region B adjacent to the first region A,respectively. That is, two first trenches 140 a may be formed in thesecond region B.

A plurality of second trenches 140 b may be formed between the firsttrenches 140 a. A first protrusion 142 may be formed between the firsttrench 140 a and the second trench 140 b. A second protrusion 144 may beformed between the second trenches 140 b. Thus, at least one secondprotrusion 144 may be formed in the second region B.

In example embodiments, the sidewall slope of the first trench 140 a maybe about 85° to about 90°. Further, a width of the first trench 140 amay be greater than 0.7 times the first pitch P and less than 20 timesthe first pitch P. For example, the width of the first trench 140 a maybe in a range of about 10 nm to about 500 nm.

In example embodiments, a width W2 of each of the first protrusions 142and a width W4 of each of the second protrusions 144 may be greater thana width of the active fin 115. Each of the widths W2 and W4 of the firstand second protrusions 142 and 144 may be greater than 0.7 times thefirst pitch P1.

In example embodiments, as shown in FIG. 22, the widths W4 of the secondprotrusions 144 may be equal to each other. Also, the widths W2 and W4of the first and second protrusions 142 and 144 may be substantially thesame. In example embodiments, the widths W3 of each of the secondtrenches 140 b may be substantially the same. Further, the widths W1 andW3 of the first and second trenches 140 a and 140 b may be substantiallythe same.

In some example embodiments, as shown in FIG. 23, the widths W4 a and W4b of some of the second protrusions 144 may be different from eachother. The widths W3 of the second trenches 140 b may be substantiallythe same as or different from each other.

In some example embodiments, as shown in FIG. 24, the widths W3 a and W3b of some of the second trenches 140 b may be different from each other.In example embodiments, the slopes of the plurality of second trenches140 b may be substantially the same as or different from each other. Thewidths W4 of the second protrusions 144 may be the same as or differentfrom each other.

In example embodiments, the first and second trenches 140 a and 140 band the first and second protrusions may be symmetric with respect to aline extending in the first direction through a center (e.g., in thesecond direction) of the second region B.

As described above, the widths of the second trenches and the secondprotrusions may not be limited thereto.

Therefore, as shown in FIG. 25, the widths W3 a and W3 b of some of thesecond trenches 140 b may be different from each other, and the widthsW4 a and W4 b of some of the second protrusions 144 may be differentfrom each other. Further, the first and second trenches 140 a and 140 band the first and second protrusions 142 and 144 may be asymmetric withrespect to a line extending in the first direction through the center(e.g., in the second direction) of the second region B.

FIG. 26 is a plan view illustrating a method of manufacturing asemiconductor device in accordance with example embodiments.

First, the processes as illustrated with reference to FIGS. 5 and 6 maybe performed.

Thereafter, referring to FIG. 26, a portion of the preliminary firstmask patterns 102 formed in the second region B may be removed to form afirst mask pattern 102 a in the first region A and second and third maskpatterns 102 b and 102 c in the second region B.

Further, in a portion between the second mask patterns in the secondregion, a removed region of at least one preliminary first mask pattern102 and a remaining region of at least one preliminary first maskpattern 102 may be repeatedly arranged.

The region of removed preliminary first mask patterns 102 adjacent tothe second mask pattern 102 b may correspond to a portion for formingthe first protrusion. Further, the remaining portion of the preliminaryfirst mask patterns 102 between the second mask patterns 102 b maycorrespond to a portion for forming the second trench. In addition, theregion of the removed preliminary first mask patterns 102 between thesecond trenches may correspond to a portion for forming the secondprotrusion.

Therefore, the widths of the first protrusion and the second protrusionmay be controlled by controlling the number of the removed preliminaryfirst mask patterns 102. Further, the widths and the slopes of the firstand second trenches may be controlled by controlling the number of theremaining preliminary first mask patterns 102 in the second region B.

Thereafter, the same processes as illustrated with reference to FIGS. 9to 17 may be performed. Thus, one of the semiconductor devicesillustrated in FIGS. 22 to 25 may be manufactured.

The semiconductor device and method of manufacturing the semiconductordevice may be used to form, e.g., a logic device such as a centralprocessing unit (CPU, MPU), an application processor (AP), or the like,e.g., a volatile memory such as an SRAM device, a DRAM device, or thelike and, e.g., non-volatile memory devices such as flash memorydevices, PRAM devices, MRAM devices, RRA \4 devices, or the like.

The foregoing is illustrative of example embodiments and is not to beconstrued as limiting thereof. Although a few example embodiments havebeen described, those skilled in the art will readily appreciate thatmany modifications are possible in the example embodiments withoutmaterially departing from the novel teachings and advantages of thepresent inventive concepts. Accordingly, all such modifications areintended to be included within the scope of the present inventiveconcepts as defined in the claims. In the claims, means-plus-functionclauses are intended to cover the structures described herein asperforming the recited function and not only structural equivalents butalso equivalent structures. Therefore, it is to be understood that theforegoing is illustrative of various example embodiments and is not tobe construed as limited to the specific example embodiments disclosed,and that modifications to the disclosed example embodiments, as well asother example embodiments, are intended to be included within the scopeof the appended claims.

What is claimed is:
 1. A method for manufacturing a semiconductordevice, comprising: forming preliminary mask patterns on a substrateincluding first regions and a second region between the first regions,each of the preliminary mask patterns extending in a first directionthat is parallel to an upper surface of the substrate, the preliminarymask patterns regularly arranged and spaced apart from each other in asecond direction that is parallel to the upper surface of the substrateand perpendicular to the first direction; removing the preliminary maskpattern positioned at a first portion among the preliminary maskpatterns formed in the second region to form mask patterns; etching thesubstrate using the mask patterns as an etch mask to form first activepatterns protruding from the substrate in the first region and secondactive patterns protruding from the substrate in the second region;forming a first isolation pattern in gaps between the first activepatterns and gaps between the second active patterns; and selectivelyetching the second active patterns and the first isolation patternpositioned at a second portion excluding the first portion in the secondregion to form a trench at the substrate in the second region, whereinthe trench includes first trenches at first and second edges in thesecond direction of the second region and a protrusion between the firsttrenches.
 2. The method of claim 1, wherein in a process of the removingthe preliminary mask pattern positioned at the first portion, at leastone preliminary mask pattern positioned at the first and second edges inthe second direction of the second region is not removed.
 3. The methodof claim 1, wherein the second portion includes at least edge portionsof the second region, and a width in the second direction of the secondportion is in a range of 10 nm to 500 nm.
 4. The method of claim 1,wherein in removing the preliminary mask pattern positioned at the firstportion, adjacent two or more preliminary mask patterns are removed. 5.The method of claim 1, wherein the second portion includes first andsecond edges in the second direction in the second region and at leastone portion spaced apart from the first and second edges in the seconddirection in the second region.
 6. The method of claim 1, wherein inetching the substrate using the mask patterns as the etching mask: afirst gap is formed between the first and second active patterns, and asecond gap is formed at the first portion of the substrate, and a bottomof the second gap is deeper than a bottom of the first gap.
 7. Themethod of claim 6, wherein selectively etching the second activepatterns and the first isolation pattern positioned at the secondportion to form the trench comprises: forming an upper etching mask onthe mask patterns and the isolation pattern to cover an entirety of thefirst region and the first portion in the second region; and etching thesecond active patterns and the first isolation pattern using the upperetch mask as an etch mask, wherein the a bottom of the first trench isdeeper than a bottom of the second gap.
 8. The method of claim 1,wherein an edge active pattern of the first active patterns is at anedge portion among the first active patterns in the second direction,and an end portion of the edge active pattern extending laterally from alower portion of the edge active pattern is connected to a sidewall ofthe one of the first trenches, and the end portion of the the edgeactive pattern and the sidewall of the one of the first trenches have anon-linear shape.
 9. The method of claim 1, wherein a sidewall slope ofthe first trench, which is an angle between a sidewall of the one of thefirst trenches and a line parallel to a bottom of the one of the firsttrenches, is in a range of 85° to 90°.
 10. The method of claim 1,wherein a sidewall slope of the first active pattern, which is an anglebetween a sidewall of the one of the first active patterns and a lineparallel to a bottom of the one of the first active patterns, is in arange of 85° to 90°.
 11. The method of claim 1, further comprising:forming a second isolation pattern in the trench; and removing upperportions of the first isolation pattern and the second isolation patternto expose upper portions of the first active pattern to form anisolation structure.
 12. The method of claim 11, further comprising:forming a gate structure extending in the second direction on the firstactive pattern and the isolation structure; and forming a source/drainlayer on the first active patterns adjacent to the gate structure. 13.The method of claim 1, wherein a second height from a top surface of theone of the first active patterns to a bottom of the one of the firsttrenches is greater than 130% of a first height from the top surface ofthe one of the first active patterns to the bottom of the one of thefirst active patterns.
 14. The method of claim 1, wherein an uppersurface of the protrusion is deeper than a bottom of each of the firstactive patterns.
 15. The method of claim 1, wherein a sum of a width ofone of the first active patterns and a distance between adjacent ones ofthe first active patterns is a first pitch, and Wherein a first width ofthe one of the first trenches is less than 20 times the first pitch. 16.A method for manufacturing a semiconductor device, comprising: formingpreliminary mask patterns on a substrate including first regions and asecond region between the first regions, each of the preliminary maskpatterns extending in a first direction that is parallel to an uppersurface of the substrate, the preliminary mask patterns regularlyarranged and spaced apart from each other in a second direction that isparallel to the upper surface of the substrate and perpendicular to thefirst direction; removing the preliminary mask pattern positioned at afirst portion among the preliminary mask patterns formed in the secondregion to form mask patterns, wherein ones of the mask patterns areformed at first and second edges in the second direction of the secondregion; etching the substrate using the mask patterns as an etch mask toform first active patterns protruding from the substrate in the firstregion and second active patterns protruding from the substrate in thesecond region; forming a first isolation pattern in gaps between thefirst active patterns and gaps between the second active patterns;selectively etching the second active patterns and the first isolationpattern positioned at a second portion excluding the first portion inthe second region to form a trench at the substrate in the secondregion; forming a second isolation pattern in the trench; and removingupper portions of the first isolation pattern and the second isolationpattern to expose upper portions of the first active pattern to form anisolation structure, forming a gate structure extending in the seconddirection on the first active pattern and the isolation structure; andforming a source/drain layer on the first active patterns adjacent tothe gate structure, wherein the trench includes first trenches at firstand second edges in the second direction of the second region and aprotrusion between the first trenches, and wherein an upper surface ofthe protrusion is deeper than a bottom of each of the first activepatterns.
 17. The method of claim 16, in a process of the removing thepreliminary mask pattern positioned at the first portion, at least onepreliminary mask pattern positioned at the first and second edges in thesecond direction of the second region is not removed.
 18. The method ofclaim 16, wherein the second portion includes at least edge portions ofthe second region, and a width in the second direction of the secondportion is in a range of 10 nm to 500 nm.
 19. A method for manufacturinga semiconductor device, comprising: partially etching a substrateincluding first regions and a second region between the first regions toform first active patterns protruding from the substrate in the firstregion and second active patterns protruding from the substrate in thesecond region, wherein at least ones of the second active patterns arepositioned at edge portions of the second region; forming a firstisolation pattern in gaps between the first active patterns and gapsbetween the second active patterns; selectively etching the secondactive patterns and the first isolation pattern adjacent to the secondactive patterns to form a trench at the substrate in the second region;and forming a second isolation pattern in the trench, wherein the trenchincludes first trenches at first and second edges in the seconddirection of the second region and a protrusion between the firsttrenches, wherein each of the first active pattern extending in a firstdirection that is parallel to an upper surface of the substrate, thefirst active patterns regularly arranged and spaced apart from eachother in a second direction that is parallel to the upper surface of thesubstrate and perpendicular to the first direction, and wherein a sum ofa width of one of the first active patterns and a distance betweenadjacent ones of the first active patterns is a first pitch.
 20. Themethod of claim 19, wherein an upper surface of the protrusion is deeperthan a bottom of each of the first active patterns.